GT1K2P15D5
Goford Semiconductor
18N20F
Part Number：
18N20F
Category：
Single FETs, MOSFETs
Manufacturer：
Goford Semiconductor
Description：
N200V, 18A,RD<0.19@10V,VTH1.0V~3
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 18A (Tc)
- Package / Case TO-220-3 Full Pack
- Supplier Device Package TO-220F
- Vgs(th) (Max) @ Id 3V @ 250µA
- Power Dissipation (Max) 35W (Tc)
- Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 852 pF @ 25 V
