GT1K2P15D5
Goford Semiconductor
2N6790
Part Number：
2N6790
Category：
Single FETs, MOSFETs
Manufacturer：
Microsemi Corporation
Description：
MOSFET N-CH 200V 3.5A TO39
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 200 V
- Current - Continuous Drain (Id) @ 25°C 3.5A (Tc)
- Supplier Device Package TO-39
- Gate Charge (Qg) (Max) @ Vgs 14.3 nC @ 10 V
- Package / Case TO-205AF Metal Can
- Power Dissipation (Max) 800mW (Tc)
- Rds On (Max) @ Id, Vgs 800mOhm @ 2.25A, 10V
