GT1K2P15D5
Goford Semiconductor
2N6792TX
Part Number：
2N6792TX
Category：
Single FETs, MOSFETs
Manufacturer：
Harris Corporation
Description：
2A, 400V, 1.8OHM, N-CHANNEL
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 400 V
- Current - Continuous Drain (Id) @ 25°C 2A (Tc)
- Power Dissipation (Max) 20W (Tc)
- Grade Military
- Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 25 V
- Vgs(th) (Max) @ Id 4V @ 1mA
- Package / Case TO-205AF Metal Can
- Supplier Device Package TO-205AF (TO-39)
- Rds On (Max) @ Id, Vgs 1.8Ohm @ 1.25A, 10V
- Qualification MIL-PRF-19500/555M
