GT1K2P15D5
Goford Semiconductor
2SJ529L06-E
Part Number：
2SJ529L06-E
Category：
Single FETs, MOSFETs
Manufacturer：
Renesas
Description：
2SJ529L06 - P-CHANNEL POWER MOSF
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 60 V
- Power Dissipation (Max) 20W (Tc)
- Operating Temperature 150°C
- Vgs(th) (Max) @ Id 2V @ 1mA
- Current - Continuous Drain (Id) @ 25°C 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
- Input Capacitance (Ciss) (Max) @ Vds 580 pF @ 10 V
- Package / Case TO-251-3 Long Leads, IPAK, TO-251AB
- Rds On (Max) @ Id, Vgs 160mOhm @ 5A, 10V
- Supplier Device Package DPAK(L)-(2)
