GT1K2P15D5
Goford Semiconductor
5N20A
Part Number：
5N20A
Category：
Single FETs, MOSFETs
Manufacturer：
Goford Semiconductor
Description：
N200V,RD(MAX)<650M@10V,VTH1V~3V,
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id 3V @ 250µA
- Current - Continuous Drain (Id) @ 25°C 5A (Tc)
- Supplier Device Package TO-252
- Power Dissipation (Max) 78W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 247 pF @ 25 V
- Rds On (Max) @ Id, Vgs 580mOhm @ 2.5A, 10V
