GT1K2P15D5
Goford Semiconductor
AIMZA75R016M1HXKSA1
Part Number：
AIMZA75R016M1HXKSA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
SICFET N-CH 750V 89A PG-TO247-4
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Current - Continuous Drain (Id) @ 25°C 89A (Tc)
- Package / Case TO-247-4
- Technology SiCFET (Silicon Carbide)
- Supplier Device Package PG-TO247-4
- Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
- Vgs (Max) +23V, -5V
- Drain to Source Voltage (Vdss) 750 V
- Power Dissipation (Max) 319W (Tc)
- Vgs(th) (Max) @ Id 5.6V @ 14.9mA
- Gate Charge (Qg) (Max) @ Vgs 81 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 2869 pF @ 500 V
- Rds On (Max) @ Id, Vgs 22mOhm @ 41.5A, 18V
