GT1K2P15D5
Goford Semiconductor
APTC60DAM35T1G
Part Number：
APTC60DAM35T1G
Category：
Single FETs, MOSFETs
Manufacturer：
Microsemi Corporation
Description：
MOSFET N-CH 600V 72A SP1
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Chassis Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 600 V
- Operating Temperature -40°C ~ 150°C (TJ)
- Power Dissipation (Max) 416W (Tc)
- Current - Continuous Drain (Id) @ 25°C 72A (Tc)
- Vgs(th) (Max) @ Id 3.9V @ 5.4mA
- Package / Case SP1
- Supplier Device Package SP1
- Rds On (Max) @ Id, Vgs 35mOhm @ 72A, 10V
- Gate Charge (Qg) (Max) @ Vgs 518 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 14000 pF @ 25 V
