GT1K2P15D5
Goford Semiconductor
AS6004
Part Number：
AS6004
Category：
Single FETs, MOSFETs
Manufacturer：
ANBON SEMICONDUCTOR (INT'L) LIMITED
Description：
P-CHANNEL ENHANCEMENT MODE MOSFE
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-236-3, SC-59, SOT-23-3
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 60 V
- Operating Temperature 150°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs(th) (Max) @ Id 3V @ 250µA
- Current - Continuous Drain (Id) @ 25°C 4A (Ta)
- Power Dissipation (Max) 1.5W (Ta)
- Supplier Device Package SOT-23-3L
- Rds On (Max) @ Id, Vgs 120mOhm @ 4A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 930 pF @ 30 V
