GT1K2P15D5
Goford Semiconductor
BS108,126
Part Number：
BS108,126
Category：
Single FETs, MOSFETs
Manufacturer：
NXP USA Inc.
Description：
MOSFET N-CH 200V 300MA TO92-3
Packaging：
Tape & Box (TB)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Supplier Device Package TO-92-3
- Drain to Source Voltage (Vdss) 200 V
- Power Dissipation (Max) 1W (Ta)
- Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Input Capacitance (Ciss) (Max) @ Vds 120 pF @ 25 V
- Vgs(th) (Max) @ Id 1.8V @ 1mA
- Current - Continuous Drain (Id) @ 25°C 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 2.8V
- Rds On (Max) @ Id, Vgs 5Ohm @ 100mA, 2.8V
