GT1K2P15D5
Goford Semiconductor
C3M0160120J
Part Number：
C3M0160120J
Category：
Single FETs, MOSFETs
Manufacturer：
Wolfspeed, Inc.
Description：
SICFET N-CH 1200V 17A TO263-7
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Current - Continuous Drain (Id) @ 25°C 17A (Tc)
- Supplier Device Package TO-263-7
- Power Dissipation (Max) 90W (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Drive Voltage (Max Rds On, Min Rds On) 15V
- Technology SiCFET (Silicon Carbide)
- Gate Charge (Qg) (Max) @ Vgs 24 nC @ 15 V
- Vgs (Max) +15V, -4V
- Rds On (Max) @ Id, Vgs 208mOhm @ 8.5A, 15V
- Vgs(th) (Max) @ Id 3.6V @ 2.33mA
- Input Capacitance (Ciss) (Max) @ Vds 632 pF @ 1000 V
