GT1K2P15D5
Goford Semiconductor
CSD13306W
Part Number：
CSD13306W
Category：
Single FETs, MOSFETs
Manufacturer：
Texas Instruments
Description：
MOSFET N-CH 12V 3.5A 6DSBGA
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Vgs (Max) ±10V
- Current - Continuous Drain (Id) @ 25°C 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
- Drain to Source Voltage (Vdss) 12 V
- Power Dissipation (Max) 1.9W (Ta)
- Package / Case 6-UFBGA, DSBGA
- Supplier Device Package 6-DSBGA (1x1.5)
- Vgs(th) (Max) @ Id 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 11.2 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 6 V
- Rds On (Max) @ Id, Vgs 10.2mOhm @ 1.5A, 4.5V
