GT1K2P15D5
Goford Semiconductor
CSD23202W10T
Part Number：
CSD23202W10T
Category：
Single FETs, MOSFETs
Manufacturer：
Texas Instruments
Description：
MOSFET P-CH 12V 2.2A 4DSBGA
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Power Dissipation (Max) 1W (Ta)
- Current - Continuous Drain (Id) @ 25°C 2.2A (Ta)
- Drain to Source Voltage (Vdss) 12 V
- Vgs(th) (Max) @ Id 900mV @ 250µA
- Package / Case 4-UFBGA, DSBGA
- Supplier Device Package 4-DSBGA (1x1)
- Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 3.8 nC @ 4.5 V
- Vgs (Max) -6V
- Rds On (Max) @ Id, Vgs 53mOhm @ 500mA, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds 512 pF @ 6 V
