GT1K2P15D5
Goford Semiconductor
DIF120SIC028
Part Number：
DIF120SIC028
Category：
Single FETs, MOSFETs
Manufacturer：
Diotec Semiconductor
Description：
SIC MOSFET, TO-247-4L, N, 118A,
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 1200 V
- Package / Case TO-247-4
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Power Dissipation (Max) 715W (Tc)
- Technology SiC (Silicon Carbide Junction Transistor)
- Supplier Device Package TO-247-4
- Vgs (Max) +20V, -5V
- Current - Continuous Drain (Id) @ 25°C 118A (Tc)
- Rds On (Max) @ Id, Vgs 28mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id 4V @ 25mA
- Gate Charge (Qg) (Max) @ Vgs 373 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 5691 pF @ 1000 V
