GT1K2P15D5
Goford Semiconductor
DMJ70H600HK3-13
Part Number：
DMJ70H600HK3-13
Category：
Single FETs, MOSFETs
Manufacturer：
Diodes Incorporated
Description：
MOSFET BVDSS: 651V~800V TO252 T&
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Current - Continuous Drain (Id) @ 25°C 7.6A (Tc)
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 25 V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Supplier Device Package TO-252 (DPAK)
- Power Dissipation (Max) 90W (Tc)
- Drain to Source Voltage (Vdss) 700 V
- Rds On (Max) @ Id, Vgs 600mOhm @ 2.4A, 10V
- Gate Charge (Qg) (Max) @ Vgs 17.4 nC @ 10 V
