GT1K2P15D5
Goford Semiconductor
DMNH6008SPSWQ-13
Part Number：
DMNH6008SPSWQ-13
Category：
Single FETs, MOSFETs
Manufacturer：
Diodes Incorporated
Description：
MOSFET BVDSS: 41V~60V POWERDI506
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Drain to Source Voltage (Vdss) 60 V
- Rds On (Max) @ Id, Vgs 8mOhm @ 20A, 10V
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount, Wettable Flank
- Current - Continuous Drain (Id) @ 25°C 16.5A (Ta), 88A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 40.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2597 pF @ 30 V
- Power Dissipation (Max) 1.6W
- Supplier Device Package PowerDI5060-8 (Type UX)
