GT1K2P15D5
Goford Semiconductor
E3M0160120D
Part Number：
E3M0160120D
Category：
Single FETs, MOSFETs
Manufacturer：
Wolfspeed, Inc.
Description：
SIC, MOSFET, 160M, 1200V, TO-247
Packaging：
Tray
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Package / Case TO-247-3
- Supplier Device Package TO-247-3
- Drain to Source Voltage (Vdss) 1200 V
- Power Dissipation (Max) 103W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 15V
- Technology SiCFET (Silicon Carbide)
- Rds On (Max) @ Id, Vgs 208mOhm @ 8.5A, 15V
- Vgs(th) (Max) @ Id 3.6V @ 2.33mA
- Current - Continuous Drain (Id) @ 25°C 17.9A (Tc)
- Vgs (Max) -8V, +19V
- Input Capacitance (Ciss) (Max) @ Vds 730 pF @ 1000 V
- Gate Charge (Qg) (Max) @ Vgs 33 nC @ 15 V
