GT1K2P15D5
Goford Semiconductor
EPC2015
Part Number：
EPC2015
Category：
Single FETs, MOSFETs
Manufacturer：
EPC
Description：
GANFET N-CH 40V 33A DIE OUTLINE
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Discontinued at
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Power Dissipation (Max) -
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Operating Temperature -40°C ~ 150°C (TJ)
- Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 20 V
- Drain to Source Voltage (Vdss) 40 V
- Package / Case Die
- Supplier Device Package Die
- Gate Charge (Qg) (Max) @ Vgs 11.6 nC @ 5 V
- Technology GaNFET (Gallium Nitride)
- Vgs (Max) +6V, -5V
- Current - Continuous Drain (Id) @ 25°C 33A (Ta)
- Rds On (Max) @ Id, Vgs 4mOhm @ 33A, 5V
- Vgs(th) (Max) @ Id 2.5V @ 9mA
