GT1K2P15D5
Goford Semiconductor
EPC2019
Part Number：
EPC2019
Category：
Single FETs, MOSFETs
Manufacturer：
EPC
Description：
GANFET N-CH 200V 8.5A DIE
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 200 V
- Power Dissipation (Max) -
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Operating Temperature -40°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 8.5A (Ta)
- Package / Case Die
- Supplier Device Package Die
- Gate Charge (Qg) (Max) @ Vgs 2.9 nC @ 5 V
- Technology GaNFET (Gallium Nitride)
- Vgs (Max) +6V, -4V
- Vgs(th) (Max) @ Id 2.5V @ 1.5mA
- Rds On (Max) @ Id, Vgs 42mOhm @ 7A, 5V
- Input Capacitance (Ciss) (Max) @ Vds 288 pF @ 100 V
