GT1K2P15D5
Goford Semiconductor
EPC2021ENGR
Part Number：
EPC2021ENGR
Category：
Single FETs, MOSFETs
Manufacturer：
EPC
Description：
TRANS GAN 80V 60A BUMPED DIE
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Power Dissipation (Max) -
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Operating Temperature -40°C ~ 150°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 15 nC @ 5 V
- Package / Case Die
- Supplier Device Package Die
- Drain to Source Voltage (Vdss) 80 V
- Current - Continuous Drain (Id) @ 25°C 60A (Ta)
- Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 40 V
- Technology GaNFET (Gallium Nitride)
- Vgs (Max) +6V, -4V
- Rds On (Max) @ Id, Vgs 2.5mOhm @ 29A, 5V
- Vgs(th) (Max) @ Id 2.5V @ 14mA
