GT1K2P15D5
Goford Semiconductor
FCP13N60N
Part Number：
FCP13N60N
Category：
Single FETs, MOSFETs
Manufacturer：
Fairchild Semiconductor
Description：
POWER FIELD-EFFECT TRANSISTOR, 1
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-220-3
- Operating Temperature -55°C ~ 150°C (TJ)
- Supplier Device Package TO-220-3
- Drain to Source Voltage (Vdss) 600 V
- Current - Continuous Drain (Id) @ 25°C 13A (Tc)
- Vgs (Max) ±30V
- Power Dissipation (Max) 116W (Tc)
- Rds On (Max) @ Id, Vgs 258mOhm @ 6.5A, 10V
- Gate Charge (Qg) (Max) @ Vgs 39.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1765 pF @ 100 V
