GT1K2P15D5
Goford Semiconductor
FDD8880-G
Part Number：
FDD8880-G
Category：
Single FETs, MOSFETs
Manufacturer：
onsemi
Description：
FDD8880-G
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Drain to Source Voltage (Vdss) 30 V
- Supplier Device Package TO-252AA
- Power Dissipation (Max) 55W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 1260 pF @ 15 V
- Current - Continuous Drain (Id) @ 25°C 13A (Ta), 58A (Tc)
- Rds On (Max) @ Id, Vgs 9mOhm @ 35A, 10V
