GT1K2P15D5
Goford Semiconductor
FDFME2P823ZT
Part Number：
FDFME2P823ZT
Category：
Single FETs, MOSFETs
Manufacturer：
Fairchild Semiconductor
Description：
2.6A, 20V, P-CHANNEL MOSFET
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Vgs(th) (Max) @ Id 1V @ 250µA
- Drain to Source Voltage (Vdss) 20 V
- Vgs (Max) ±8V
- FET Feature Schottky Diode (Isolated)
- Current - Continuous Drain (Id) @ 25°C 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 7.7 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 405 pF @ 10 V
- Power Dissipation (Max) 1.4W (Ta)
- Package / Case 6-UFDFN Exposed Pad
- Rds On (Max) @ Id, Vgs 142mOhm @ 2.3A, 4.5V
- Supplier Device Package 6-MicroFET (1.6x1.6)
