GT1K2P15D5
Goford Semiconductor
FDG311N
Part Number：
FDG311N
Category：
Single FETs, MOSFETs
Manufacturer：
Fairchild Semiconductor
Description：
MOSFET N-CH 20V 1.9A SC88
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Vgs(th) (Max) @ Id 1.5V @ 250µA
- Drain to Source Voltage (Vdss) 20 V
- Power Dissipation (Max) 750mW (Ta)
- Vgs (Max) ±8V
- Package / Case 6-TSSOP, SC-88, SOT-363
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
- Current - Continuous Drain (Id) @ 25°C 1.9A (Ta)
- Supplier Device Package SC-88 (SC-70-6)
- Input Capacitance (Ciss) (Max) @ Vds 270 pF @ 10 V
- Rds On (Max) @ Id, Vgs 115mOhm @ 1.9A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 4.5 nC @ 4.5 V
