GT1K2P15D5
Goford Semiconductor
FDP8880
Part Number：
FDP8880
Category：
Single FETs, MOSFETs
Manufacturer：
Fairchild Semiconductor
Description：
POWER FIELD-EFFECT TRANSISTOR, 1
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-220-3
- Supplier Device Package TO-220-3
- Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Drain to Source Voltage (Vdss) 30 V
- Power Dissipation (Max) 55W (Tc)
- Current - Continuous Drain (Id) @ 25°C 11A (Ta), 54A (Tc)
- Rds On (Max) @ Id, Vgs 11.6mOhm @ 40A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 1240 pF @ 15 V
