GT1K2P15D5
Goford Semiconductor
FF06100J-7
Part Number：
FF06100J-7
Category：
Single FETs, MOSFETs
Manufacturer：
fastSiC
Description：
SICFET N-CH 650V 20.6A TO-263-7L
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Drain to Source Voltage (Vdss) 650 V
- Power Dissipation (Max) 83W (Tc)
- Technology SiCFET (Silicon Carbide)
- Current - Continuous Drain (Id) @ 25°C 20.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 400 V
- Supplier Device Package D2PAK-7L
- Vgs (Max) 18V
- Rds On (Max) @ Id, Vgs 100mOhm @ 10A, 18V
- Gate Charge (Qg) (Max) @ Vgs 43 nC @ 15 V
- Vgs(th) (Max) @ Id 2.2V @ 14mA
