GT1K2P15D5
Goford Semiconductor
FQN1N60CTA
Part Number：
FQN1N60CTA
Category：
Single FETs, MOSFETs
Manufacturer：
Fairchild Semiconductor
Description：
SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Supplier Device Package TO-92-3
- Input Capacitance (Ciss) (Max) @ Vds 170 pF @ 25 V
- Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Drain to Source Voltage (Vdss) 600 V
- Vgs (Max) ±30V
- Current - Continuous Drain (Id) @ 25°C 300mA (Tc)
- Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 10 V
- Rds On (Max) @ Id, Vgs 11.5Ohm @ 150mA, 10V
- Power Dissipation (Max) 1W (Ta), 3W (Tc)
