GT1K2P15D5
Goford Semiconductor
FQPF630
Part Number：
FQPF630
Category：
Single FETs, MOSFETs
Manufacturer：
Fairchild Semiconductor
Description：
POWER FIELD-EFFECT TRANSISTOR, 6
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
- Package / Case TO-220-3 Full Pack
- Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 25 V
- Vgs (Max) ±25V
- Power Dissipation (Max) 38W (Tc)
- Supplier Device Package TO-220F-3
- Current - Continuous Drain (Id) @ 25°C 6.3A (Tc)
- Rds On (Max) @ Id, Vgs 400mOhm @ 3.15A, 10V
