GT1K2P15D5
Goford Semiconductor
G085P02TS
Part Number：
G085P02TS
Category：
Single FETs, MOSFETs
Manufacturer：
Goford Semiconductor
Description：
P-20V,-8.2A,RD(MAX)<8.5M@-4.5V,V
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
- Drain to Source Voltage (Vdss) 20 V
- Vgs (Max) ±8V
- Package / Case 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package 8-TSSOP
- Current - Continuous Drain (Id) @ 25°C 8.2A (Tc)
- Vgs(th) (Max) @ Id 900mV @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs 8.5mOhm @ 4.2A, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds 1255 pF @ 10 V
- Power Dissipation (Max) 1.05W (Tc)
