GT1K2P15D5
Goford Semiconductor
G12P10K
Part Number：
G12P10K
Category：
Single FETs, MOSFETs
Manufacturer：
Goford Semiconductor
Description：
P100V,RD(MAX)<200M@-10V,RD(MAX)<
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Rds On (Max) @ Id, Vgs 200mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
- Supplier Device Package TO-252
- Current - Continuous Drain (Id) @ 25°C 12A
- Power Dissipation (Max) 57W
- Input Capacitance (Ciss) (Max) @ Vds 1720 pF @ 50 V
