GT1K2P15D5
Goford Semiconductor
G16N03S
Part Number：
G16N03S
Category：
Single FETs, MOSFETs
Manufacturer：
Goford Semiconductor
Description：
N30V, 16A,RD<10M@10V,VTH1.0V~2.5
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Drain to Source Voltage (Vdss) 30 V
- Supplier Device Package 8-SOP
- Rds On (Max) @ Id, Vgs 10mOhm @ 10A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 1321 pF @ 15 V
- Power Dissipation (Max) 3.8W (Tc)
