GT1K2P15D5
Goford Semiconductor
G1K1P06LH
Part Number：
G1K1P06LH
Category：
Single FETs, MOSFETs
Manufacturer：
Goford Semiconductor
Description：
MOSFET P-CH 60V 4.5A 3.1W SOT-2
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-236-3, SC-59, SOT-23-3
- Supplier Device Package SOT-23-3
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 60 V
- Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
- Power Dissipation (Max) 3.1W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 970 pF @ 30 V
- Rds On (Max) @ Id, Vgs 110mOhm @ -3A,- 10V
