GT1K2P15D5
Goford Semiconductor
G250N03IE
Part Number：
G250N03IE
Category：
Single FETs, MOSFETs
Manufacturer：
Goford Semiconductor
Description：
N30V,ESD 5.3A,RD<25M@10V,VTH0.5V
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-236-3, SC-59, SOT-23-3
- Supplier Device Package SOT-23-3
- Vgs (Max) ±10V
- Drain to Source Voltage (Vdss) 30 V
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
- Current - Continuous Drain (Id) @ 25°C 5.3A (Tc)
- Vgs(th) (Max) @ Id 1.3V @ 250µA
- Rds On (Max) @ Id, Vgs 25mOhm @ 4A, 10V
- Gate Charge (Qg) (Max) @ Vgs 9.1 nC @ 4.5 V
- Power Dissipation (Max) 1.4W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 573 pF @ 15 V
