GT1K2P15D5
Goford Semiconductor
G2R120MT33J
Part Number：
G2R120MT33J
Category：
Single FETs, MOSFETs
Manufacturer：
GeneSiC Semiconductor
Description：
SIC MOSFET N-CH TO263-7
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Vgs(th) (Max) @ Id -
- Power Dissipation (Max) -
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Supplier Device Package TO-263-7
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Technology SiCFET (Silicon Carbide)
- Vgs (Max) +25V, -10V
- Current - Continuous Drain (Id) @ 25°C 35A
- Drain to Source Voltage (Vdss) 3300 V
- Rds On (Max) @ Id, Vgs 156mOhm @ 20A, 20V
- Gate Charge (Qg) (Max) @ Vgs 145 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 3706 pF @ 1000 V
