GT1K2P15D5
Goford Semiconductor
G630J
Part Number：
G630J
Category：
Single FETs, MOSFETs
Manufacturer：
Goford Semiconductor
Description：
MOSFET N-CH 200V 9A TO-251
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Vgs(th) (Max) @ Id 3V @ 250µA
- Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
- Current - Continuous Drain (Id) @ 25°C 9A (Tc)
- Power Dissipation (Max) 83W (Tc)
- Rds On (Max) @ Id, Vgs 280mOhm @ 4.5A, 10V
- Supplier Device Package TO-251
