GT1K2P15D5
Goford Semiconductor
GA10JT12-263
Part Number：
GA10JT12-263
Category：
Single FETs, MOSFETs
Manufacturer：
GeneSiC Semiconductor
Description：
TRANS SJT 1200V 25A
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- Supplier Device Package -
- FET Feature -
- Grade -
- Qualification -
- Package / Case -
- Vgs(th) (Max) @ Id -
- Current - Continuous Drain (Id) @ 25°C 25A (Tc)
- Power Dissipation (Max) 170W (Tc)
- FET Type -
- Drain to Source Voltage (Vdss) 1200 V
- Operating Temperature 175°C (TJ)
- Vgs (Max) -
- Drive Voltage (Max Rds On, Min Rds On) -
- Technology SiC (Silicon Carbide Junction Transistor)
- Rds On (Max) @ Id, Vgs 120mOhm @ 10A
- Input Capacitance (Ciss) (Max) @ Vds 1403 pF @ 800 V
