GT1K2P15D5
Goford Semiconductor
GAN080-650EBEZ
Part Number：
GAN080-650EBEZ
Category：
Single FETs, MOSFETs
Manufacturer：
Nexperia USA Inc.
Description：
650 V, 80 MOHM GALLIUM NITRIDE (
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 650 V
- Current - Continuous Drain (Id) @ 25°C 29A (Tc)
- Package / Case 8-VDFN Exposed Pad
- Power Dissipation (Max) 240W (Tc)
- Mounting Type Surface Mount, Wettable Flank
- Technology GaNFET (Gallium Nitride)
- Drive Voltage (Max Rds On, Min Rds On) 6V
- Supplier Device Package DFN8080-8
- Rds On (Max) @ Id, Vgs 80mOhm @ 8A, 6V
- Vgs(th) (Max) @ Id 2.5V @ 30.7mA
- Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 6 V
- Vgs (Max) +7V, -6V
- Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 400 V
