GT1K2P15D5
Goford Semiconductor
GAN7R0-150LBEZ
Part Number：
GAN7R0-150LBEZ
Category：
Single FETs, MOSFETs
Manufacturer：
Nexperia USA Inc.
Description：
150 V, 7 MOHM GALLIUM NITRIDE (G
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Operating Temperature -40°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 150 V
- Gate Charge (Qg) (Max) @ Vgs 7.6 nC @ 5 V
- Current - Continuous Drain (Id) @ 25°C 28A
- Technology GaNFET (Gallium Nitride)
- Vgs (Max) +6V, -4V
- Power Dissipation (Max) 28W
- Rds On (Max) @ Id, Vgs 7mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id 2.1V @ 5mA
- Input Capacitance (Ciss) (Max) @ Vds 865 pF @ 85 V
- Supplier Device Package 3-FCLGA (3.2x2.2)
- Package / Case 3-VLGA
