GT1K2P15D5
Goford Semiconductor
GANE3R9-150QBAZ
Part Number：
GANE3R9-150QBAZ
Category：
Single FETs, MOSFETs
Manufacturer：
Nexperia USA Inc.
Description：
GANE3R9-150QBA/SOT8091/VQFN7
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Operating Temperature -40°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 150 V
- Gate Charge (Qg) (Max) @ Vgs 20 nC @ 5 V
- Current - Continuous Drain (Id) @ 25°C 100A (Ta)
- Technology GaNFET (Gallium Nitride)
- Vgs (Max) +6V, -4V
- Package / Case 25-PowerVFQFN
- Power Dissipation (Max) 65W (Ta)
- Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 75 V
- Rds On (Max) @ Id, Vgs 3.9mOhm @ 30A, 5V
- Vgs(th) (Max) @ Id 2.1V @ 12mA
- Supplier Device Package 25-VQFN (4x6)
