GT1K2P15D5
Goford Semiconductor
GCMX080B120S1-E1
Part Number：
GCMX080B120S1-E1
Category：
Single FETs, MOSFETs
Manufacturer：
SemiQ
Description：
SIC 1200V 80M MOSFET SOT-227
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Chassis Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Current - Continuous Drain (Id) @ 25°C 30A (Tc)
- Package / Case SOT-227-4, miniBLOC
- Supplier Device Package SOT-227
- Drain to Source Voltage (Vdss) 1200 V
- Power Dissipation (Max) 142W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Vgs(th) (Max) @ Id 4V @ 10mA
- Technology SiCFET (Silicon Carbide)
- Vgs (Max) +25V, -10V
- Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
- Gate Charge (Qg) (Max) @ Vgs 58 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 1336 pF @ 1000 V
