GT1K2P15D5
Goford Semiconductor
GS0650116LMRXUSA1
Part Number：
GS0650116LMRXUSA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
GS-065-011-6-L-MR
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Power Dissipation (Max) -
- Drain to Source Voltage (Vdss) 700 V
- Package / Case 8-PowerVDFN
- Current - Continuous Drain (Id) @ 25°C 12.2A (Tc)
- Technology GaNFET (Gallium Nitride)
- Supplier Device Package 8-PDFN (5x6)
- Drive Voltage (Max Rds On, Min Rds On) 6V
- Vgs (Max) +7V, -10V
- Rds On (Max) @ Id, Vgs 180mOhm @ 3.2A, 6V
- Vgs(th) (Max) @ Id 2.6V @ 2.4mA
- Gate Charge (Qg) (Max) @ Vgs 2.2 nC @ 6 V
- Input Capacitance (Ciss) (Max) @ Vds 70 pF @ 400 V
