GT1K2P15D5
Goford Semiconductor
GS120R045Q4
Part Number：
GS120R045Q4
Category：
Single FETs, MOSFETs
Manufacturer：
Goford Semiconductor
Description：
SiC MOSFET N-CH 1200V 60A TO-24
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Current - Continuous Drain (Id) @ 25°C 60A (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Package / Case TO-247-4
- Supplier Device Package TO-247-4L
- Vgs(th) (Max) @ Id 4V @ 10mA
- Power Dissipation (Max) 395W (Tc)
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Rds On (Max) @ Id, Vgs 52mOhm @ 20A, 18V
- Vgs (Max) -10V, +20V
- Input Capacitance (Ciss) (Max) @ Vds 2565 pF @ 1000 V
