GT1K2P15D5
Goford Semiconductor
GT011N03D5E
Part Number：
GT011N03D5E
Category：
Single FETs, MOSFETs
Manufacturer：
Goford Semiconductor
Description：
MOSFET N-CH ESD 30V 209A DFN5*6-
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Drain to Source Voltage (Vdss) 30 V
- Power Dissipation (Max) 89W (Tc)
- Vgs (Max) ±18V
- Current - Continuous Drain (Id) @ 25°C 209A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
- Package / Case 8-PowerTDFN
- Supplier Device Package 8-DFN (4.9x5.75)
- Rds On (Max) @ Id, Vgs 0.95mOhm @ 10A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 6503 pF @ 15 V
