GT1K2P15D5
Goford Semiconductor
GT040N04TI
Part Number：
GT040N04TI
Category：
Single FETs, MOSFETs
Manufacturer：
Goford Semiconductor
Description：
N40V, 110A,RD<4M@10V,VTH1.0V~2.5
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-220-3
- Operating Temperature -55°C ~ 150°C (TJ)
- Supplier Device Package TO-220
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Current - Continuous Drain (Id) @ 25°C 110A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
- Power Dissipation (Max) 160W (Tc)
- Drain to Source Voltage (Vdss) 40 V
- Rds On (Max) @ Id, Vgs 4mOhm @ 10A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 2303 pF @ 20 V
