GT1K2P15D5
Goford Semiconductor
GT088N06T
Part Number：
GT088N06T
Category：
Single FETs, MOSFETs
Manufacturer：
Goford Semiconductor
Description：
N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-220-3
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 60 V
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Power Dissipation (Max) 75W (Tc)
- Vgs(th) (Max) @ Id 2.4V @ 250µA
- Current - Continuous Drain (Id) @ 25°C 60A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
- Rds On (Max) @ Id, Vgs 9mOhm @ 14A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 1116 pF @ 30 V
