GT1K2P15D5
Goford Semiconductor
GT700P08T
Part Number：
GT700P08T
Category：
Single FETs, MOSFETs
Manufacturer：
Goford Semiconductor
Description：
P-80V, -25A,RD<72M@-10V,VTH-2V~-
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-220-3
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Power Dissipation (Max) 125W (Tc)
- Supplier Device Package TO-220
- Vgs(th) (Max) @ Id 3.5V @ 250µA
- Current - Continuous Drain (Id) @ 25°C 25A (Tc)
- Drain to Source Voltage (Vdss) 80 V
- Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
- Rds On (Max) @ Id, Vgs 72mOhm @ 2A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 1639 pF @ 40 V
