GT1K2P15D5
Goford Semiconductor
IMDQ75R060M1HXUMA1
Part Number：
IMDQ75R060M1HXUMA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
IMDQ75R060M1HXUMA1
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Power Dissipation (Max) 167W (Tc)
- Current - Continuous Drain (Id) @ 25°C 34A (Tc)
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
- Gate Charge (Qg) (Max) @ Vgs 23 nC @ 18 V
- Drain to Source Voltage (Vdss) 750 V
- Supplier Device Package PG-HDSOP-22-1
- Package / Case 22-PowerBSOP Module
- Vgs (Max) +20V, -2V
- Vgs(th) (Max) @ Id 5.6V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds 779 pF @ 500 V
- Rds On (Max) @ Id, Vgs 55mOhm @ 11.1A, 20V
