GT1K2P15D5
Goford Semiconductor
IMLT65R015M2HXTMA1
Part Number：
IMLT65R015M2HXTMA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
SICFET N-CH 650V 142A HDSOP-16
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 650 V
- Power Dissipation (Max) 600W (Tc)
- Current - Continuous Drain (Id) @ 25°C 142A (Tc)
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +23V, -7V
- Package / Case 16-PowerSOP Module
- Vgs(th) (Max) @ Id 5.6V @ 13mA
- Gate Charge (Qg) (Max) @ Vgs 79 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 2792 pF @ 400 V
- Rds On (Max) @ Id, Vgs 18mOhm @ 64.2A, 18V
- Supplier Device Package PG-HDSOP-16-6
