GT1K2P15D5
Goford Semiconductor
IPA95R130PFD7XKSA1
Part Number：
IPA95R130PFD7XKSA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
MOSFET N-CH 950V 13.9A TO220-3
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-220-3 Full Pack
- Power Dissipation (Max) 33W (Tc)
- Drain to Source Voltage (Vdss) 950 V
- Gate Charge (Qg) (Max) @ Vgs 141 nC @ 10 V
- Supplier Device Package PG-TO220 Full Pack
- Current - Continuous Drain (Id) @ 25°C 13.9A (Tc)
- Rds On (Max) @ Id, Vgs 130mOhm @ 25.1A, 10V
- Vgs(th) (Max) @ Id 3.5V @ 1.25mA
- Input Capacitance (Ciss) (Max) @ Vds 4170 pF @ 400 V
