GT1K2P15D5
Goford Semiconductor
IPB018N10N5ATMA1
Part Number：
IPB018N10N5ATMA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
TRENCH >=100V
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Gate Charge (Qg) (Max) @ Vgs 210 nC @ 10 V
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Supplier Device Package PG-TO263-3
- Input Capacitance (Ciss) (Max) @ Vds 16000 pF @ 50 V
- Vgs(th) (Max) @ Id 3.8V @ 270µA
- Power Dissipation (Max) 3.8W (Ta), 375W (Tc)
- Rds On (Max) @ Id, Vgs 1.83mOhm @ 100A, 10V
- Current - Continuous Drain (Id) @ 25°C 33A (Ta), 176A (Tc)
