GT1K2P15D5
Goford Semiconductor
IPB043N10NF2SATMA1
Part Number：
IPB043N10NF2SATMA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
AUTOMOTIVE MOSFET
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V
- Supplier Device Package PG-TO263-3
- Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 50 V
- Power Dissipation (Max) 3.8W (Ta), 167W (Tc)
- Current - Continuous Drain (Id) @ 25°C 21A (Ta), 135A (Tc)
- Rds On (Max) @ Id, Vgs 4.35mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id 3.8V @ 93µA
